| 1. | The doping level has a strong influence on the films " electrical properties
F掺杂量对薄膜电性能有较大影响。 |
| 2. | Also the hydrophilicity of the film increased with the doping level ' s rising
薄膜亲水性随着n的掺杂量增加而升高。 |
| 3. | Therefore , it can be deduced that the doping level of the pani film increases with film thiekness during film growing process
从而反映出聚苯胺膜的掺杂程度在膜生长过程中随膜厚度的增长而增加。 |
| 4. | When the doping level is low , the resistivity decreases with the doping level ' s rising and when the doping level is high , the resistivity increases with the doping level ' s rising
在掺杂量较小时，薄膜电阻率随着掺杂量的提高而减小，当掺杂量较大时，薄膜电阻率随掺杂量的提高而增大。 |
| 5. | The hydropilicity and photocatalysis of the samples were studied . the effects of the substrate temperature , carrier gas flux , o2 flux and n doping level on the microstructure , composition and properties of the films have been studied synthetically
文章系统研究了基板温度、载气流量、 o _ 2流量和n掺杂量等工艺参数对tio _ 2薄膜微结构、组成和性能的影响。 |
| 6. | In this thesis , we study the thz pulse generation efficiency of the < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and doping levels , using thz time - domain spectroscopy . it is found that both absorption and phase matching condition play important role . it is the first time to systematically study < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and different doping levels using thz time - domain spectroscopy
本论文中，我们利用thz时域光谱系统对不同组分、不同掺杂的zn _ ( 1 - x ) cd _ xte < 110 >单晶( x = 0 0 . 25 )作为thz辐射材料的性能和光谱响应进行了研究，发现晶体对thz辐射的吸收和晶体的相位匹配是影响晶体产生thz辐射效率的重要因素。 |
| 7. | The oxidizing parameters of the anodization in the following experiments were preferred on the basis of measuring the dependence of pl properties ( peak position , and max intensity , etc . ) on anodization conditions , such as the anodizing current density , the time of the anodization , the concentration of the solution ( mainly of hf ) , and on the doping level of the substrate
刻蚀时间、刻蚀液配比及衬底电阻率对pl发光强度、峰值波长等性质的影响。在此基础上优化出制备多孔硅的具体参数。对不掺sb与掺sb的snci 。 |
| 8. | The difference between the magnetic moments for the samples with respective doping level can be ascribed to the variation of the competition between thermal effect and the magnetic coupling . based on the spin orientation rotation of dy sublattice as well as the antiferomagnetic coupling between dy sublattice and mn sublattice , we successfully elucidate the changes of magnetic structure in perovskite compounds s . electron spin resonance ( esr ) study on perovskite compounds on the basis of chapter 4 , we give further study on micromagneticism of dy - doping perovskite compounds la0 . 67 - xdyxsr0 . 33mno3
其中第一节简单回顾了早期对a位双稀土元素元素掺杂钙钛矿化合物的研究，早期研究较多的是替代元素的离子半径变化上，由于替代离子半径的改变，使a位平均半径变ylll化，致使公差因子改变，使mn o长、键角变化，晶格效应的作用使化合物的磁性、电性、 cmr效应发生改变。 |
| 9. | Therefore , znte crystal has been the most common material for pulsed thz wave sensing and imaging applications . kai liu et al have studied < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and different doping levels to find optimal materials " parameters for high performance thz radiation emitters . they explained their experimental results from the points of view of crystal quality and crystal dc resistivity
为了进一步认识znte晶体产生thz辐射的效率与材料特性的关系，刘凯等人研究了不同组分、不同掺杂的zn _ ( 1 - x ) cd _ xte ( 110 )单晶( x = 0 0 . 4 )产生thz辐射的效率，并从晶体的质量和晶体的直流电阻率出发解释了他们的实验结果。 |
| 10. | ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing , and firstly used as the anode materials for lithium ion secondary batteries . the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length . on the other hand , through the process of charge and discharge in cells , the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡劲松河北师死大学硕士学位论文（ 3 ）利用阳极氧化法在单晶硅基底上制备了多孔硅自支撑膜，并首次将这种具有连续多孔结构的硅材料用作了理离子电池的阳极材料，考察了这种纳米级硅阳极的储钾性能和充放电过程，分析了材料结构对其储理行为的影响；另一方面，利用这种电池充放电过程在多孔硅中电化学引入了不同点缀程度的轻金属钾元素，考察了钾点缀对多孔硅自身结构，及至性质所带来的影响，提供了一种通过电化学方法插入埋离子从而连续调整多孔硅发光性质的有效方法。 |
